Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High holding high voltage (HHHV) FET for ESD protection with modified source and method for producing the same

High holding high voltage (HHHV) FET for ESD protection with modified source and method for producing the same

US Patent 10453836 · Granted Oct 22, 2019

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Heat sink for face bonded semiconductor device2025
Semiconductor device integration with an amorphous region2025
Heterojunction bipolar transistor with amorphous semiconductor regions2025
Semiconductor device including a body contact region and method of forming the s2025
High voltage MOSFET device with improved breakdown voltage2024
High holding high voltage (HHHV) FET for ESD protection with modified source and2022
High holding high voltage (HHHV) FET for ESD protection with modified source and2022
High holding high voltage (HHHV) FET for ESD protection with modified source and2022
Low voltage NPN with low trigger voltage and high snap back voltage for ESD prot2019
Electrostatic discharge protective structures2019
ESD protection device with buried layer having variable doping concentrations2019
ESD protection circuit and method of making the same2019