Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Diode-triggered Schottky silicon-controlled rectifier for Fin-FET electrostatic discharge control

Diode-triggered Schottky silicon-controlled rectifier for Fin-FET electrostatic discharge control

US Patent 10373946 · Granted Aug 6, 2019

Estimated economic value: $34,724,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Production of L-2-aminobutyrate from citramalate, citraconate or 2-oxobutanoate2025
Planar transistor device comprising at least one layer of a two-dimensional (2D)2025
Communication device with heat dissipation base2025
Mixed reality production method using inertial measurement data and electronic d2025
Semiconductor device having a gate contact over an active region2024
Well tap for an integrated circuit product and methods of forming such a well ta2023
Planar transistor device comprising at least one layer of a two-dimensional (2D)2023
Extended reality space generating apparatus and method2022
Optical switch keyboard adjustment method and optical switch keyboard using the 2022
Fully depleted devices with slots in active regions2022
Vertical transistor device comprising a two-dimensional (2D) material positioned2021
Vertical transistor device with source/drain regions comprising a twi-dimensiona2021