Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a field-effect transistor (FET) or other semiconductor device with front-side source and drain contacts

Method of forming a field-effect transistor (FET) or other semiconductor device with front-side source and drain contacts

US Patent 10326013 · Granted Jun 18, 2019

Estimated economic value: $145,037,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Display screen or portion thereof with graphical user interface2025
Building system with a recommendation interface2025
Building automation system with resource consumption tracking features2024
Systems and methods for ranking recommendations2024
Systems and methods for ranking recommendations2024
Building management system with optimized processing of building system data2023
Building management system with device twinning, communication connection valida2023
Building management system with point virtualization for online meters2023
Building management system with dynamic work order generation with adaptive diag2023
Building management system with global rule library and crowdsourcing framework2023
Systems and methods for controlling a building management system2023
Integrated wire harness batch production using augmented reality2023