Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › In situ nitrogen doping of co-evaporated copper-zinc-tin-sulfo-selenide by nitrogen plasma

In situ nitrogen doping of co-evaporated copper-zinc-tin-sulfo-selenide by nitrogen plasma

US Patent 10304979 · Granted May 28, 2019

Estimated economic value: $2,255,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of forming porous inorganic films via polymer swelling infiltration2025
Avalanche photodiodes with adaptive quenching of photocurrent2025
Stabilization of metallic nanowire meshes via encapsulation2025
Stabilization of metallic nanowire meshes via encapsulation2025
Low refractive index surface layers and related methods2025
Two-terminal metastable mixed-conductor memristive devices2025
Josephson junction device fabricated by direct write ion implantation2024
Plasma co-doping to reduce the forming voltage in resistive random access memory2023
Etch-resistant doped scavenging carbide electrodes2023
Low refractive index surface layers and related methods2023
Resonator-based ion-selective sensor2023
Atomic layer deposition for photovoltaic devices2022