Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of etching silicon oxide and silicon nitride selectively against each other

Method of etching silicon oxide and silicon nitride selectively against each other

US Patent 10304691 · Granted May 28, 2019

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Substrate processing method and substrate processing apparatus2025
Plasma processing method2024
Etching method and plasma processing apparatus2023
Plasma processing method2023
Substrate processing method, substrate processing apparatus and cleaning apparat2023
Method of etching silicon containing films selectively against each other2022
Method of etching silicon containing films selectively against each other2022
Plasma processing method including cleaning of inside of chamber main body of pl2022
Etching method and plasma processing apparatus2022
Method of etching silicon containing films selectively against each other2021
Method of etching silicon containing films selectively against each other2021
Plasma etching method and plasma etching apparatus2020