Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › EUV source chamber and gas flow regime for lithographic apparatus, multi-layer mirror and lithographic apparatus

EUV source chamber and gas flow regime for lithographic apparatus, multi-layer mirror and lithographic apparatus

US Patent 10295916 · Granted May 21, 2019

Estimated economic value: $17,597,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Laser focussing module2024
Reflective optical element for a radiation beam2022
Topography measurement system2019
Lithographic apparatus and method2019
Radiation modulator for a lithography apparatus, a lithography apparatus, a meth2017
Lithographic apparatus and method2017
Device, lithographic apparatus, method for guiding radiation and device manufact2017
Illumination system and lithographic apparatus2017
Process tuning with polarization2017
Illumination system, lithographic apparatus and method2016
Lithographic apparatus and method2016
Illumination system and lithographic apparatus2015