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Home › High voltage electrostatic discharge (ESD) bipolar integrated in a vertical field-effect transistor (VFET) technology and method for producing the same

High voltage electrostatic discharge (ESD) bipolar integrated in a vertical field-effect transistor (VFET) technology and method for producing the same

US Patent 10290626 · Granted May 14, 2019

Estimated economic value: $20,760,000 ⓘ

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