Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Offset-canceling (OC) write operation sensing circuits for sensing switching in a magneto-resistive random access memory (MRAM) bit cell in an MRAM for a write operation

Offset-canceling (OC) write operation sensing circuits for sensing switching in a magneto-resistive random access memory (MRAM) bit cell in an MRAM for a write operation

US Patent 10290340 · Granted May 14, 2019

Estimated economic value: $19,257,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Hybrid flop tray including different fin size flip-flops2025
SRAM with improved write performance and write operation method thereof2025
Content addressable memory based on selfrectifying ferroelectric tunnel junction2025
Dual-edge-triggered flip-flop2025
Memory device for controlling word line voltage and operating method thereof2024
Semiconductor memory device capable of controlling a floating state of adjacent 2024
Bit line sense amplifier and semiconductor memory apparatus using the same2024
Ferroelectric FET nonvolatile sense-amplifier-based flip-flop2024
Nonvolatile memory device and latch including the same2024
Physically unclonable function apparatus based on ferroelectric elements and ope2024
In-memory device for operating multi-bit weight2024
In-memory device for operating multi-bit weight2024