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Home › Method for producing silicon carbide single crystal in a solution process using a seed crystal having a bottom face with a circular shape and at least a partially removed section

Method for producing silicon carbide single crystal in a solution process using a seed crystal having a bottom face with a circular shape and at least a partially removed section

US Patent 10260167 · Granted Apr 16, 2019

Estimated economic value: $360,000 ⓘ

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