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Home › Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base

Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base

US Patent 10236366 · Granted Mar 19, 2019

Estimated economic value: $3,213,000 ⓘ

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