Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Spin orbit torque magnetoresistive random access memory containing composite spin hall effect layer including beta phase tungsten

Spin orbit torque magnetoresistive random access memory containing composite spin hall effect layer including beta phase tungsten

US Patent 10229723 · Granted Mar 12, 2019

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Highly textured buffer layer to grow YBiPt (110) for spintronic applications2025
Spin orbit torque based thermal sensor for insitu monitoring of magnetic recordi2025
Nitrogen doped oxides for lower bandgap2025
Multilayer structures for magnetic recording devices to facilitate targeted magn2025
Non-localized spin valve multi-free-layer reader hybridized with spin orbit torq2025
Magnetic sensor half-bridge based on inverse spin hall effect with reduced therm2025
Buffer layers and interlayers that promote BiSbx (012) alloy orientation for sot2025
Non-localized spin valve reader hybridized with spin orbit torque layer2025
Higher areal density non-local spin orbit torque (SOT) writer with topological i2025
SOT reader with recessed SOT topological insulator material2025
Spin-orbit torque SOT reader with recessed spin hall effect layer2025
Spin-transfer torque magnetoresistive memory device with a free layer stack incl2025