Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Error characterization and mitigation for 16 nm MLC NAND flash memory under total ionizing dose effect

Error characterization and mitigation for 16 nm MLC NAND flash memory under total ionizing dose effect

US Patent 10224111 · Granted Mar 5, 2019

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Memory image capture2024
Cache program operation of three-dimensional memory device with static random-ac2024
Data buffering operation of three-dimensional memory device with static random-a2024
Reduced impact application recovery2024
Three-dimensional memory device with static random-access memory2023
Multi-level caching to deploy local volatile memory, local persistent memory, an2023
Application recovery using a memory image2023
Memory image capture2022
Persistent memory image capture2022
Cache program operation of three-dimensional memory device with static random-ac2022
Fork handling in application operations mapped to direct access persistent memor2022
CMOS image sensor with pixel power supply noise suppression circuit2022