Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Isolation components for transistors formed on fin features of semiconductor substrates

Isolation components for transistors formed on fin features of semiconductor substrates

US Patent 10217669 · Granted Feb 26, 2019

Estimated economic value: $13,274,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Reducing parasitic capacitance2025
Double seal ring and electrical connection of multiple chiplets2025
Gate stack for metal gate transistor2025
Performance of magnetic channel junctions2025
Electronic fuse (eFuse) designs for enhanced chip security2024
Gate stack for metal gate transistor2024
Real-time, in-situ reliability monitoring in an integrated circuit2023
Device having bipolar junction transistors and finFET transistors on the same su2023
Systems and methods for configuring a central processing unit having multiple co2023
Electrical performance and reliability of a semiconductor device comprising cont2022
Decoupling capacitor integrated in system on chip (SOC) device2022
Through-silicon via for high-speed interconnects2022