Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Bi-stable static random access memory (SRAM) bit cells formed from III-V compounds and configured to achieve higher operating speeds

Bi-stable static random access memory (SRAM) bit cells formed from III-V compounds and configured to achieve higher operating speeds

US Patent 10186514 · Granted Jan 22, 2019

Estimated economic value: $7,881,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Child toilet assembly with damping2025
Super pixel architecture for high dynamic range2025
High numerical aperture selective plane illumination microscopy2025
Monolithic three-dimensional (3D) complementary field effect transistor (CFET) c2025
Monolithic three-dimensional (3D) complementary field effect transistor (CFET) c2025
Pulse width modulation and amplitude modulation driving system for display panel2025
Semiconductor structure with a transition layer located between gate and ion imp2025
Pressure washer handle2025
Pb-free perovskite materials for short wave IR devices2025
Foam cannon for pressure washer2025
Method and system for multi-view episcopic selective plane illumination microsco2025
Foam lance for pressure washer2025