Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Extended drain NMOS transistor with buried P type region

Extended drain NMOS transistor with buried P type region

US Patent 10177243 · Granted Jan 8, 2019

Estimated economic value: $22,071,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Screening method and apparatus for detecting deep trench isolation and SOI defec2022
Low cost LF driver current sense topology2019
Low cost LF driver current sense topology2019
Electrostatic discharge protection apparatuses2019
Thyristor, a method of triggering a thyristor, and thyristor circuits2018
Cascode semiconductor device for power factor correction2016
Interface for communication between voltage domains2014
Galvanic isolation device and method2014
Edge termination for semiconductor device2010
Method of providing enhanced breakdown by diluted doping profiles in high-voltag2010
Power converter2007