Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › LDMOS transistor with lightly-doped annular RESURF periphery

LDMOS transistor with lightly-doped annular RESURF periphery

US Patent 10153366 · Granted Dec 11, 2018

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Flash memory cell structure having separate program and erase electron paths2025
Double-diffused metal-oxide-semiconductor transistor including a recessed dielec2025
Schottky diode with tunable blocking voltage2024
Trench semiconductor device layout configurations2022
Structure and system for simultaneous sensing a magnetic field and mechanical st2020
Trench semiconductor device layout configurations2020
Drift-region field control of an LDMOS transistor using biased shallow-trench fi2018
Drift-region field control of an LDMOS transistor using biased shallow-trench fi2018
High voltage tolerant bonding pad structure for trench-based semiconductor devic2018
Structure and system for simultaneous sensing a magnetic field and mechanical st2017
Termination trench structures for high-voltage split-gate MOS devices2017
Vertical hall effect sensor2017