Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Metal-semiconductor heterodimension field effect transistors (MESHFET) and high electron mobility transistor (HEMT) based device and method of making the same

Metal-semiconductor heterodimension field effect transistors (MESHFET) and high electron mobility transistor (HEMT) based device and method of making the same

US Patent 10153273 · Granted Dec 11, 2018

Estimated economic value: $256,799,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for manufacturing seat for measuring standard driving posture of human bo2025
Container lid2025
Method for measuring deformation of dummy rib2025
Skin manufacturing post-treatment method for automobile collision dummy2025
Skin manufacturing post-treatment device for automobile collision dummy2025
Method for predicting dummy head injury during automobile collision2025
Tool and method for measuring parallelism and coaxiality of rotating shafts of s2024
Dynamic content delivery based on vehicle navigational attributes2024
Tool and method for measuring perpendicularity and angle of femur of vehicle cra2024
Method and system for measuring relationship between crash dummy chest compressi2024
Tool and method for measuring parallelism and angle of shank skeleton of vehicle2024
Method and apparatus for recommending a charging station2024