Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of fabricating a transistor with reduced hot carrier injection effects

Method of fabricating a transistor with reduced hot carrier injection effects

US Patent 10147800 · Granted Dec 4, 2018

Estimated economic value: $216,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor structure2025
Semiconductor-on-insulator wafer having a composite insulator layer2025
Photonic semiconductor-on-insulator (SOI) substrate and method for forming the p2025
Semiconductor device and method for forming the same2025
Semiconductor wafer with devices having different top layer thicknesses2025
Semiconductor device and fabrication method thereof2025
Embedded backside memory on a field effect transistor2025
Method for forming a semiconductor-on-insulator (SOI) substrate2024
Semiconductor structure and manufacturing method thereof2024
Multi-function substrate2024
Transistor structure2024
Transistor structure2024