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Home › High voltage MOS structure and its manufacturing method

High voltage MOS structure and its manufacturing method

US Patent 10141398 · Granted Nov 27, 2018

Estimated economic value: $169,000 ⓘ

Assignee

United Microelectronics

Inventors

Ming-Hua Tsai (16 patents)
Jung Han (11 patents)
Chin-Chia Kuo (15 patents)
Wen-Fang Lee (43 patents)
Chih-Chung Wang (79 patents)

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