Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrated circuit structure having gate contact and method of forming same

Integrated circuit structure having gate contact and method of forming same

US Patent 10128187 · Granted Nov 13, 2018

Estimated economic value: $39,610,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Global-shutter pixel2025
Pixel with vertical transfer structure for dark current improvement, an image se2025
Central deep trench isolation shift2025
High dynamic range, backside-illuminated, low crosstalk image sensor with walls 2025
Distributed synchronous training architecture using stale weights2025
Formation of trench silicide source or drain contacts without gate damage2025
CMOS devices with asymmetrically passivated isolation structure and methods ther2025
Image sensor diagonal isolation structures2025
Dual depth junction structures and process methods2025
Uniform threshold voltage non-planar transistors2024
Dark-current inhibiting image sensor and method2024
Pixel layout with photodiode region partially surrounding circuitry2024