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Home › Phototransistor having E-B junction and B-C junction are in direct physical contact and completely encapsulated only by the emitter, the collector and a dielectric

Phototransistor having E-B junction and B-C junction are in direct physical contact and completely encapsulated only by the emitter, the collector and a dielectric

US Patent 10121819 · Granted Nov 6, 2018

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