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Home › Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials

Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials

US Patent 10121799 · Granted Nov 6, 2018

Estimated economic value: $17,900,000 ⓘ

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