Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for manufacturing an edge termination for a silicon carbide power semiconductor device

Method for manufacturing an edge termination for a silicon carbide power semiconductor device

US Patent 10115834 · Granted Oct 30, 2018

Estimated economic value: $1,264,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Bidirectional thyristor device2025
Module comprising a switchable bypass device2025
Bidirectional thyristor device with asymmetric characteristics2025
Power semiconductor device2025
Power semiconductor device with free-floating packaging concept2024
Power semiconductor module2021
Bidirectional phase controlled thyristor (BiPCT)—a new semiconductor device conc2021
Power semiconductor device and method for producing a power semiconductor device2020
Phase control thyristor2019
Thyristor with improved plasma spreading2019
Bipolar non-punch-through power semiconductor device2018
Reverse conducting power semiconductor device2017