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Home › Back gate biasing magneto-resistive random access memory (MRAM) bit cells to reduce or avoid write operation failures caused by source degeneration

Back gate biasing magneto-resistive random access memory (MRAM) bit cells to reduce or avoid write operation failures caused by source degeneration

US Patent 10102895 · Granted Oct 16, 2018

Estimated economic value: $13,339,000 ⓘ

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