Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of producing a silicon carbide single-crystal substrate by epitaxial growth of a SiC epitaxial film on a SiC substrate

Method of producing a silicon carbide single-crystal substrate by epitaxial growth of a SiC epitaxial film on a SiC substrate

US Patent 10096470 · Granted Oct 9, 2018

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Silicon carbide semiconductor device and method of manufacturing silicon carbide2025
Silicon carbide semiconductor device2024
Silicon carbide semiconductor device and method of manufacturing silicon carbide2023
Method of manufacturing silicon carbide semiconductor device, method of manufact2022
Silicon carbide semiconductor device and method of manufacturing silicon carbide2022
Silicon carbide semiconductor device and method of manufacturing silicon carbide2022
Method of manufacturing silicon carbide semiconductor device, and method of manu2020
Semiconductor device and manufacturing method thereof2020
Silicon carbide semiconductor device and a method of manufacturing a silicon car2019
Silicon carbide semiconductor base, method of crystal axis alignment in silicon 2018
Silicon carbide semiconductor device manufacturing method2018
Method of manufacturing silicon carbide semiconductor device2017