Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Manufacture method of gate insulating film for silicon carbide semiconductor device

Manufacture method of gate insulating film for silicon carbide semiconductor device

US Patent 10068762 · Granted Sep 4, 2018

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electronic control device2025
Multilayer varistor2025
Ballpoint pen2024
Semiconductor device2023
Carboxymethylated cellulose nanofibers2023
Acid-type carboxymethylated cellulose nanofiber and production method thereof2023
Acid type carboxylated cellulose nanofiber2023
Reactor device2022
Head-mounted display2022
Method for evaluating cellulose nanofiber dispersion, cellulose nanofiber aqueou2021
Insulating sheet, and backrest seat and cold weather garment employing the same2021
Thermal conduction sheet and secondary battery pack using same2021