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Home › Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery

Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery

US Patent 10062426 · Granted Aug 28, 2018

Estimated economic value: $23,018,000 ⓘ

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