{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Graphene NMOS transistor using nitrogen dioxide chemical adsorption", "item": "https://www.patentleaderboard.com/patent/10038060"}]}
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Home › Graphene NMOS transistor using nitrogen dioxide chemical adsorption

Graphene NMOS transistor using nitrogen dioxide chemical adsorption

US Patent 10038060 · Granted Jul 31, 2018

Estimated economic value: $18,138,000 ⓘ

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