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Home › Methods for forming FinFETs having epitaxial Si S/D extensions with flat top surfaces on a SiGe seed layer

Methods for forming FinFETs having epitaxial Si S/D extensions with flat top surfaces on a SiGe seed layer

US Patent 10020303 · Granted Jul 10, 2018

Estimated economic value: $4,870,000 ⓘ

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