Issued Patents All Time
Showing 76–100 of 109 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7606276 | Nitride semiconductor device and method for fabricating the same | Yoshiaki Hasegawa, Akihiko Ishibashi | 2009-10-20 |
| 7501667 | Nitride semiconductor light-emitting device | Yoshiaki Hasegawa, Akihiko Ishibashi | 2009-03-10 |
| 7470608 | Semiconductor light emitting device and fabrication method thereof | Akihiko Ishibashi, Kiyoshi Ohnaka, Susumu Koike | 2008-12-30 |
| 7396697 | Semiconductor light-emitting device and method for manufacturing the same | Yoshiaki Hasegawa, Atsushi Yamada | 2008-07-08 |
| 7338827 | Nitride semiconductor laser and method for fabricating the same | Gaku Sugahara, Yasutoshi Kawaguchi, Akihiko Ishibashi, Isao Kidoguchi | 2008-03-04 |
| 7221690 | Semiconductor laser and process for manufacturing the same | Yoshiaki Hasegawa | 2007-05-22 |
| 7056756 | Nitride semiconductor laser device and fabricating method thereof | Gaku Sugahara, Yoshiaki Hasegawa, Akihiko Ishibashi | 2006-06-06 |
| 7030417 | Semiconductor light emitting device and fabrication method thereof | Akihiko Ishibashi, Kiyoshi Ohnaka, Susumu Koike | 2006-04-18 |
| 7009216 | Semiconductor light emitting device and method of fabricating the same | Nobuyuki Otsuka, Shigeo Yoshii | 2006-03-07 |
| 6995396 | Semiconductor substrate, semiconductor device and method for fabricating the same | Kunimasa Takahashi, Masao Uchida, Makoto Kitabatake, Osamu Kusumoto, Kenya Yamashita +1 more | 2006-02-07 |
| 6989553 | Semiconductor device having an active region of alternating layers | Kunimasa Takahashi, Osamu Kusumoto, Makoto Kitabatake, Takeshi Uenoyama | 2006-01-24 |
| 6953954 | Plasma oscillation switching device | Shigeo Yoshii, Nobuyuki Otsuka, Koichi Mizuno, Asamira Suzuki | 2005-10-11 |
| 6940127 | Equipment for communication system and semiconductor integrated circuit device | Kunimasa Takahashi, Masao Uchida, Makoto Kitabatake, Osamu Kusumoto | 2005-09-06 |
| 6927149 | Nitride semiconductor device and fabrication method thereof, and method for forming nitride semiconductor substrate | Gaku Sugahara, Yasutoshi Kawaguchi, Akihiko Ishibashi, Atsushi Matsubara | 2005-08-09 |
| 6917457 | Process of fabricating semiconductor light emitting device | Nobuyuki Otsuka, Shigeo Yoshii, Masahiro Kitoh | 2005-07-12 |
| 6903383 | Semiconductor device having a high breakdown voltage for use in communication systems | Asamira Suzuki, Masahiro Deguchi, Shigeo Yoshii, Hiroyuki Furuya | 2005-06-07 |
| 6900483 | Semiconductor device and method for manufacturing the same | Masao Uchida, Makoto Kitabatake, Osamu Kusumoto, Kunimasa Takahashi, Ryoko Miyanaga +1 more | 2005-05-31 |
| 6864507 | MISFET | Makoto Kitabatake, Osamu Kusumoto, Kunimasa Takahashi, Takeshi Uenoyama | 2005-03-08 |
| 6855571 | Method of producing GaN-based semiconductor laser device and semiconductor substrate used therefor | Gaku Sugahara, Atsushi Yamada, Akihiko Ishibashi | 2005-02-15 |
| 6806109 | Method of fabricating nitride based semiconductor substrate and method of fabricating nitride based semiconductor device | Hiroyuki Furuya, Akihiko Ishibashi, Yoshiaki Hasegawa | 2004-10-19 |
| 6778308 | Process of fabricating semiconductor light emitting device | Nobuyuki Otsuka, Shigeo Yoshii, Masahiro Kitoh | 2004-08-17 |
| 6690035 | Semiconductor device having an active region of alternating layers | Kunimasa Takahashi, Osamu Kusumoto, Makoto Kitabatake, Takeshi Uenoyama | 2004-02-10 |
| 6674131 | Semiconductor power device for high-temperature applications | Kunimasa Takahashi, Makoto Kitabatake, Osamu Kusumoto, Takeshi Uenoyama, Koji Miyazaki | 2004-01-06 |
| 6654604 | Equipment for communication system | Kunimasa Takahashi, Masao Uchida, Makoto Kitabatake, Osamu Kusumoto | 2003-11-25 |
| 6617653 | MISFET | Makoto Kitabatake, Osamu Kusumoto, Kunimasa Takahashi, Takeshi Uenoyama | 2003-09-09 |