MO

Mitsuaki Oya

PA Panasonic: 18 patents #1,184 of 21,108Top 6%
NJ Nuvoton Technology Corporation Japan: 2 patents #77 of 222Top 35%
Overall (All Time): #218,548 of 4,157,543Top 6%
20
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
12087897 Semiconductor device Masanori HIROKI, Keimei Masamoto, Shigeo Hayashi 2024-09-10
11569424 Semiconductor device Masanori HIROKI, Keimei Masamoto, Shigeo Hayashi 2023-01-31
9287378 Nitride semiconductor light-emitting element and method for fabricating the same Toshiya Yokogawa 2016-03-15
9209350 Method for fabricating triangular prismatic m-plane nitride semiconductor light-emitting diode Toshiya Yokogawa 2015-12-08
8933543 Nitride semiconductor element having m-plane angled semiconductor region and electrode including Mg and Ag Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki 2015-01-13
8791473 Nitride semiconductor light-emitting element, illuminating device, liquid crystal display device, method for producing nitride semiconductor light-emitting element and method for manufacturing illuminating device Toshiya Yokogawa, Akira Inoue, Masaki Fujikane, Atsushi Yamada, Tadashi Yano 2014-07-29
8748899 Nitride-based semiconductor device and method for fabricating the same Toshiya Yokogawa, Atsushi Yamada, Ryou Kato 2014-06-10
8729579 Nitride-based semiconductor light-emitting element, lighting device, liquid crystal display device, and method for producing lighting device Toshiya Yokogawa, Akira Inoue, Masaki Fujikane, Atsushi Yamada, Tadashi Yano 2014-05-20
8729587 Nitride semiconductor element and manufacturing method therefor Toshiya Yokogawa, Atsushi Yamada, Ryou Kato 2014-05-20
8686561 Nitride-based semiconductor device and method for fabricating the same Toshiya Yokogawa, Atsushi Yamada, Ryou Kato 2014-04-01
8648378 Nitride-based semiconductor device and method for fabricating the same Toshiya Yokogawa, Atsushi Yamada, Ryou Kato 2014-02-11
8441108 Nitride semiconductor element having electrode on m-plane and method for producing the same Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki 2013-05-14
8357607 Method for fabricating nitride-based semiconductor device having electrode on m-plane Toshiya Yokogawa, Atsushi Yamada, Ryou Kato 2013-01-22
8334199 Method for fabricating nitride-based semiconductor device having electrode on m-plane Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki 2012-12-18
8318594 Method for fabricating nitride-based semiconductor device having electrode on m-plane Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki 2012-11-27
8309984 Nitride-based semiconductor device having electrode on m-plane Toshiya Yokogawa, Atsushi Yamada, Ryou Kato 2012-11-13
8304802 Nitride-based semiconductor device having electrode on m-plane Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki 2012-11-06
8299490 Nitride-based semiconductor device having electrode on m-plane Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki 2012-10-30
8164109 Nitride semiconductor element and method for producing the same Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki 2012-04-24
8110851 Nitride-based semiconductor device and method for fabricating the same Toshiya Yokogawa, Atsushi Yamada, Ryou Kato 2012-02-07