Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12431411 | Semiconductor device and semiconductor component including the same | Masayuki Kuroda, Takahiro Sato, Manabu Yanagihara, Masahiro Hikita | 2025-09-30 |
| 12419069 | Nitride semiconductor device with suppressed leakage current and method of fabricating the same | Masahiro Hikita, Manabu Yanagihara | 2025-09-16 |
| 11257918 | Semiconductor device and method of manufacturing the device | Yusuke Kanda, Manabu Yanagihara, Takeshi Harada | 2022-02-22 |
| 11171228 | Nitride semiconductor device and method for manufacturing the same | Manabu Yanagihara, Masahiro Hikita | 2021-11-09 |
| 11152499 | Nitride semiconductor device and method for manufacturing same | Manabu Yanagihara, Takahiro Sato, Masahiro Hikita | 2021-10-19 |
| 9859413 | Nitride semiconductor device and method of manufacturing the same | Masahiro Hikita, Hisayoshi Matsuo, Yasuhiro Uemoto | 2018-01-02 |
| 9685549 | Nitride semiconductor device and method for manufacturing same | Yasuhiro Uemoto, Masahiro Hikita, Hidenori Takeda, Takahiro Sato, Akihiko Nishio | 2017-06-20 |
| 9577084 | Semiconductor device having a semiconductor layer stacked body | Masahiro Hikita | 2017-02-21 |
| 9412858 | Group III nitride semiconductor device which can be used as a power transistor | Masahiro Hikita, Yasuhiro Uemoto | 2016-08-09 |
| 9293574 | Semiconductor device and method of manufacturing semiconductor device | Yasuhiro Uemoto, Masahiro Hikita, Akihiko Nishio, Hidenori Takeda, Takahiro Sato | 2016-03-22 |
| 8114726 | AlGaN/GaN HEMT with normally-off threshold minimized and method of manufacturing the same | Toshiharu Marui | 2012-02-14 |
| 7811872 | Method for manufacturing a field effect transistor having a field plate | Shinichi Hoshi, Masanori Itoh, Toshiharu Marui | 2010-10-12 |
| 7812372 | Semiconductor device having a support substrate partially having metal part extending across its thickness | — | 2010-10-12 |