TW

Thomas Wunderer

PI Palo Alto Research Center Incorporated: 30 patents #53 of 776Top 7%
Xerox: 5 patents #2,266 of 8,622Top 30%
FG Freiberger Compound Materials Gmbh: 2 patents #28 of 57Top 50%
📍 Santa Cruz, CA: #77 of 1,911 inventorsTop 5%
🗺 California: #12,730 of 386,348 inventorsTop 4%
Overall (All Time): #88,308 of 4,157,543Top 3%
37
Patents All Time

Issued Patents All Time

Showing 26–37 of 37 patents

Patent #TitleCo-InventorsDate
9252329 Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction John E. Northrup, Christopher L. Chua, Michael A. Kneissl, Noble M. Johnson 2016-02-02
9219189 Graded electron blocking layer John E. Northrup, Bowen Cheng, Christopher L. Chua, Noble M. Johnson, Zhihong Yang +1 more 2015-12-22
9124062 Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector John E. Northrup, Mark R. Teepe, Noble M. Johnson 2015-09-01
9112331 Surface emitting laser incorporating third reflector John E. Northrup, Noble M. Johnson 2015-08-18
9112332 Electron beam pumped vertical cavity surface emitting laser Noble M. Johnson, John E. Northrup 2015-08-18
9106053 Distributed feedback surface emitting laser 2015-08-11
9064980 Devices having removed aluminum nitride sections Christopher L. Chua, Brent S. Krusor, Noble M. Johnson 2015-06-23
8964796 Structure for electron-beam pumped edge-emitting device and methods for producing same John E. Northrup, Mark R. Teepe, Zhihong Yang, Christopher L. Chua, Noble M. Johnson 2015-02-24
8908161 Removing aluminum nitride sections Brent S. Krusor, Christopher L. Chua, Noble M. Johnson, Bowen Cheng 2014-12-09
8822314 Method of growing epitaxial layers on a substrate Christopher L. Chua, Mark R. Teepe, Zhihong Yang, Noble M. Johnson, Clifford F. Knollenberg 2014-09-02
8536030 Semipolar semiconductor crystal and method for manufacturing the same Stephan Schwaiger, Ilona Argut, Rudolph Rosch, Frank Lipski, Ferdinand Scholz 2013-09-17
7727332 Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby Frank Habel, Ferdinand Scholz, Barbara Neubert, Peter Brückner 2010-06-01