Issued Patents All Time
Showing 1–25 of 40 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11453294 | Control device of motor driven vehicle, control method of motor driven vehicle and non-transitory computer readable storage medium storing control program of motor driven vehicle | — | 2022-09-27 |
| 11239493 | Method for bonding solid electrolyte layer and electrodes, method for manufacturing fuel cell, and fuel cell | Tomihito Hashimoto | 2022-02-01 |
| 7217950 | Insulated gate tunnel-injection device having heterojunction and method for manufacturing the same | Saichirou Kaneko, Masakatsu Hoshi, Kraisorn Throngnumchai, Tetsuya Hayashi, Hideaki Tanaka | 2007-05-15 |
| 7183575 | High reverse voltage silicon carbide diode and method of manufacturing the same high reverse voltage silicon carbide diode | Yoshio Shimoida, Saichirou Kaneko, Hideaki Tanaka, Masakatsu Hoshi, Kraisom Throngnumchai +1 more | 2007-02-27 |
| 5682048 | Groove-type semiconductor device | Toshiro Shinohara, Masakatsu Hoshi | 1997-10-28 |
| 5675169 | Motor driving circuit with surge detection/protection and its structure in a semiconductor device | Masakatsu Hoshi, Kraisorn Throngnumchai | 1997-10-07 |
| 5635742 | Lateral double-diffused mosfet | Masakatsu Hoshi | 1997-06-03 |
| 5629704 | Target position detecting apparatus and method utilizing radar | Kraisorn Throngnumchai, Hiroshige Fukuhara, Yukitsugu Hirota | 1997-05-13 |
| RE35405 | Method of manufacturing semiconductor device utilizing an accumulation layer | Yoshinori Murakami | 1996-12-17 |
| 5406104 | MOSFET circuit with separate and common electrodes | Masaki Hirota | 1995-04-11 |
| 5212109 | Method for forming PN junction isolation regions by forming buried regions of doped polycrystalline or amorphous semiconductor | — | 1993-05-18 |
| 5192989 | Lateral DMOS FET device with reduced on resistance | Tsutomu Matsushita, Masakatsu Hoshi, Kenji Yao | 1993-03-09 |
| 5184204 | Semiconductor device with high surge endurance | Tsutomu Matsushita, Kenji Yao, Masakatsu Hoshi, Yutaka Enokido, Yukitsugu Hirota | 1993-02-02 |
| 5132238 | Method of manufacturing semiconductor device utilizing an accumulation layer | Yoshinori Murakami | 1992-07-21 |
| 5049953 | Schottky tunnel transistor device | Kenji Yao, Tsutomu Matsushita, Yoshinori Murakami | 1991-09-17 |
| 5040034 | Semiconductor device | Yoshinori Murakami, Tsutomu Matsushita, Kenji Yao, Norihiko Kiritani | 1991-08-13 |
| 5027251 | MOSFET including current mirror FET therein | Masaki Hirota, Norio Fujiki | 1991-06-25 |
| 4972240 | Vertical power MOS transistor | Koichi Murakami, Yukitsugu Hirota | 1990-11-20 |
| 4972239 | Conductivity modulated MOSFET | — | 1990-11-20 |
| 4937639 | Input protector device for semiconductor device | Kenji Yao, Noriyuki Abe, Tsutomu Matsushita | 1990-06-26 |
| 4931846 | Vertical MOSFET having voltage regulator diode at shallower subsurface position | — | 1990-06-05 |
| 4928159 | Semiconductor device | Tsutomu Matsushita | 1990-05-22 |
| 4922317 | CMOS device having Schottky diode for latch-up prevention | — | 1990-05-01 |
| 4920396 | CMOS having buried layer for carrier recombination | Toshiro Shinohara, Kenji Yao | 1990-04-24 |
| 4893158 | MOSFET device | Yukitsugu Hirota, Yukio Hiramoto, Tsutomu Matsushita | 1990-01-09 |