SM

Sadaaki Masuoka

NE Nec: 8 patents #1,742 of 14,502Top 15%
NE Nec Electronics: 6 patents #86 of 1,789Top 5%
Samsung: 5 patents #22,466 of 75,807Top 30%
Overall (All Time): #229,772 of 4,157,543Top 6%
19
Patents All Time

Issued Patents All Time

Showing 1–19 of 19 patents

Patent #TitleCo-InventorsDate
12294005 Semiconductor device having a plurality of channel layers and method of manufacturing the same Woo-Cheol Shin, Myung Gil Kang, Sang Hoon Lee, Sung Man WHANG 2025-05-06
11862639 Semiconductor device having a plurality of channel layers and method of manufacturing the same Woo-Cheol Shin, Myung Gil Kang, Sang Hoon Lee, Sung Man WHANG 2024-01-02
11437377 Method of manufacturing semiconductor device having a plurality of channel layers Woo-Cheol Shin, Myung Gil Kang, Sang Hoon Lee, Sung Man WHANG 2022-09-06
10833085 Semiconductor device having a plurality of channel layers and method of manufacturing the same Woo-Cheol Shin, Myung Gil Kang, Sang Hoo LEE, Sung Man WHANG 2020-11-10
8753945 Method of manufacturing a semiconductor device Keon Yong Cheon, Dong Won Kim, Sung-Man Lim, Yaoqi Dong 2014-06-17
7498626 Semiconductor device and method of manufacturing the same Hiroaki Ohkubo, Yasutaka Nakashiba 2009-03-03
7256462 Semiconductor device 2007-08-14
7190009 Semiconductor device 2007-03-13
6798027 Semiconductor device including gate insulation films having different thicknesses 2004-09-28
6627490 Semiconductor device and method for fabricating the same Kiyotaka Imai 2003-09-30
6551884 Semiconductor device including gate insulation films having different thicknesses 2003-04-22
6472714 Semiconductor device in which memory cells and peripheral circuits are provided on the same circuit Kiyotaka Imai 2002-10-29
6413811 Method of forming a shared contact in a semiconductor device including MOSFETS 2002-07-02
6342413 Method of manufacturing semiconductor device Kiyotaka Imai 2002-01-29
6217357 Method of manufacturing two-power supply voltage compatible CMOS semiconductor device 2001-04-17
6133082 Method of fabricating CMOS semiconductor device 2000-10-17
5994179 Method of fabricating a MOSFET featuring an effective suppression of reverse short-channel effect 1999-11-30
5994743 Semiconductor device having different sidewall widths and different source/drain depths for NMOS & PMOS structures 1999-11-30
5733792 MOS field effect transistor with improved pocket regions for suppressing any short channel effects and method for fabricating the same 1998-03-31