Issued Patents All Time
Showing 26–43 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7067343 | ISFETs fabrication method | Zhi Jie Chen, Shih-I Liu | 2006-06-27 |
| 7019343 | SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof | Yii Fang Wang | 2006-03-28 |
| 7009376 | SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof | Yii Fang Wang | 2006-03-07 |
| 6974716 | Method for fabricating a titanium nitride sensing membrane on an EGFET | Stephen Hsiung, Tai-Ping Sun, Wen-Yaw Chung, Yuan-Lung Chin, Lei Zhen Ce | 2005-12-13 |
| 6963193 | a-C:H ISFET device, manufacturing method, and testing methods and apparatus thereof | Hsuan-Ming Tsai | 2005-11-08 |
| 6905896 | SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof | Yii Fang Wang | 2005-06-14 |
| 6897081 | Method for fabricating a monolithic chip including pH, temperature and photo-intensity multi-sensors and a readout circuit | Stephen Hsiung, Tai-Ping Sun, Wen-Yaw Chung, Yuan-Lung Chin, Chung-We Pan | 2005-05-24 |
| 6867059 | A-C:H ISFET device manufacturing method, and testing methods and apparatus thereof | Hsuan-Ming Tsai | 2005-03-15 |
| 6847067 | A-C:H ISFET device, manufacturing method, and testing methods and apparatus thereof | Hsuan-Ming Tsai | 2005-01-25 |
| 6806116 | SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof | Yii Fang Wang | 2004-10-19 |
| 6740911 | &agr;-WO3-gate ISFET devices and method of making the same | Jung Lung Chiang | 2004-05-25 |
| 6617190 | A-WO3-gate ISFET devices and method of making the same | Jung Lung Chiang | 2003-09-09 |
| 6573741 | Apparatus for measuring temperature parameters of an ISFET using hydrogenated amorphous as a sensing film | Yii Fang Wang | 2003-06-03 |
| 6531858 | Method for measuring drift values of an ISFET using the hydrogenated amorphous silicon as a sensing film | Hsuan-Ming Tsai | 2003-03-11 |
| 6525554 | Method and apparatus for measuring temperature parameters of an ISFET using hydrogenated amorphous silicon as a sensing film | Yii Fang Wang | 2003-02-25 |
| 6322942 | Xerographic photoreceptor primarily formed by the hydrogenated amorphous silicon material and the method for manufacturing the same | Hsu-Ying Yang, Chau-Yun Jen | 2001-11-27 |
| 6236075 | Ion sensitive transistor | Shen-Kan Hsiung, Tai-Ping Sun, Wen-Yaw Chung, Hung-Kwei Liao, Chung-Lin Wu | 2001-05-22 |
| 6218208 | Fabrication of a multi-structure ion sensitive field effect transistor with a pH sensing layer of a tin oxide thin film | Wen-Yaw Chung, Shen-Kan Hsiung, Tai-Ping Sun, Hung-Kwei Liao | 2001-04-17 |