Issued Patents All Time
Showing 51–63 of 63 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5747353 | Method of making surface micro-machined accelerometer using silicon-on-insulator technology | Abul Ehsanul Kabir | 1998-05-05 |
| 5691232 | Planarized trench and field oxide isolation scheme | Francois Hebert, Datong Chen | 1997-11-25 |
| 5683932 | Method of fabricating a planarized trench and field oxide isolation structure | Francois Hebert, Datong Chen | 1997-11-04 |
| 5681776 | Planar selective field oxide isolation process using SEG/ELO | Francois Hebert, Datong Chen | 1997-10-28 |
| 5581114 | Self-aligned polysilicon base contact in a bipolar junction transistor | Francois Hebert | 1996-12-03 |
| 5451532 | Process for making self-aligned polysilicon base contact in a bipolar junction transistor | Francois Hebert | 1995-09-19 |
| 5439833 | Method of making truly complementary and self-aligned bipolar and CMOS transistor structures with minimized base and gate resistances and parasitic capacitance | Francois Hebert, Datong Chen | 1995-08-08 |
| 5434092 | Method for fabricating a triple self-aligned bipolar junction transistor | Gerold W. Neudeck | 1995-07-18 |
| 5411913 | Simple planarized trench isolation and field oxide formation using poly-silicon | Francois Hebert, Datong Chen | 1995-05-02 |
| 5397722 | Process for making self-aligned source/drain polysilicon or polysilicide contacts in field effect transistors | Francois Hebert | 1995-03-14 |
| 5385861 | Planarized trench and field oxide and poly isolation scheme | Francois Hebert, Datong Chen | 1995-01-31 |
| 5382828 | Triple self-aligned bipolar junction transistor | Gerold W. Neudeck | 1995-01-17 |
| 5286996 | Triple self-aligned bipolar junction transistor | Gerold W. Neudeck | 1994-02-15 |