Issued Patents All Time
Showing 26–40 of 40 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8405134 | Magnetic tunnel junction device | — | 2013-03-26 |
| 8394649 | Method of production of a magnetoresistance effect device | David Djulianto Djayaprawira, Koji Tsunekawa, Motonobu Nagai, Hiroki Maehara, Shinji Yamagata +1 more | 2013-03-12 |
| 8378437 | Magnetoresistive effect element and magnetic random access memory | Masahiko Nakayama, Kay Yakushiji, Sumio Ikegawa, Tadashi Kai, Toshihiko Nagase +4 more | 2013-02-19 |
| 8319263 | Magnetic tunnel junction device | — | 2012-11-27 |
| 8270198 | Nonvolatile optical memory element, memory device, and reading method thereof | Vadym Zayets, Koji Ando, Hidekazu Saito | 2012-09-18 |
| 8208292 | Magnetoresistive element and magnetic memory | Tadashi Kai, Katsuya Nishiyama, Toshihiko Nagase, Masatoshi Yoshikawa, Eiji Kitagawa +10 more | 2012-06-26 |
| 8107281 | Magnetoresistive element and magnetic memory | Tadashi Kai, Katsuya Nishiyama, Toshihiko Nagase, Masatoshi Yoshikawa, Eiji Kitagawa +10 more | 2012-01-31 |
| 8013408 | Negative-resistance device with the use of magneto-resistive effect | Hiroki Maehara, Hitoshi Kubota, Akio Fukushima, Yoshishige Suzuki, Yoshinori Nagamine | 2011-09-06 |
| 7884403 | Magnetic tunnel junction device and memory device including the same | — | 2011-02-08 |
| 7764136 | Microwave transmission line integrated microwave generating element and microwave transmission line integrated microwave detecting element | Yoshishige Suzuki, Akio Fukushima, Ashwin Tulapurkar | 2010-07-27 |
| 7514160 | Tunnel magnetoresistance element having a double underlayer of amorphous MgO and crystalline MgO(001) | Taro Nagahama, Yoshishige Suzuki | 2009-04-07 |
| 7220498 | Tunnel magnetoresistance element | Taro Nagahama, Yoshishige Suzuki | 2007-05-22 |
| 7095657 | Nonvolatile semiconductor memory device capable of realizing optimized erasing operation in a memory array | Yoshinori Takase, Hideaki Kurata, Keiichi Yoshida, Ken Matsubara, Michitaro Kanamitsu | 2006-08-22 |
| 6958940 | Nonvolatile semiconductor memory device capable of realizing optimized erasing operation in a memory array | Yoshinori Takase, Hideaki Kurata, Keiichi Yoshida, Ken Matsubara, Michitaro Kanamitsu | 2005-10-25 |
| 6710986 | Tunneling magnetoresistive head and a process of tunneling magnetoresistive head | Toshihiko Sato | 2004-03-23 |