Issued Patents All Time
Showing 51–75 of 87 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5889310 | Semiconductor device with high breakdown voltage island region | Kazuhiro Shimizu | 1999-03-30 |
| 5874767 | Semiconductor device including a lateral power device | Kazuhiro Shimizu | 1999-02-23 |
| 5763926 | Semiconductor device having a Bi-CMOS transistor including an n-channel MOS transistor | Fumitoshi Yamamoto | 1998-06-09 |
| 5731628 | Semiconductor device having element with high breakdown voltage | — | 1998-03-24 |
| 5726598 | Semiconductor device having voltage sensing element | Masanori Fukunaga | 1998-03-10 |
| 5624858 | Method of manufacturing a semiconductor device with increased breakdown voltage | — | 1997-04-29 |
| 5561077 | Dielectric element isolated semiconductor device and a method of manufacturing the same | — | 1996-10-01 |
| 5541430 | VDMOS semiconductor device | — | 1996-07-30 |
| 5500541 | Semiconductor device having voltage sensing element | Masanori Fukunaga | 1996-03-19 |
| 5497011 | Semiconductor memory device and a method of using the same | — | 1996-03-05 |
| 5495124 | Semiconductor device with increased breakdown voltage | — | 1996-02-27 |
| 5485030 | Dielectric element isolated semiconductor device and a method of manufacturing the same | — | 1996-01-16 |
| 5477064 | Thyristor | — | 1995-12-19 |
| 5460981 | Semiconductor device having increased current capacity | Gourab Majumdar | 1995-10-24 |
| 5455439 | Semiconductor device which moderates electric field concentration caused by a conductive film formed on a surface thereof | Kazumasa Satsuma, Masao Yoshizawa | 1995-10-03 |
| 5428241 | High breakdown voltage type semiconductor device | — | 1995-06-27 |
| 5389801 | Semiconductor device having increased current capacity | Gourab Majumdar | 1995-02-14 |
| 5372954 | Method of fabricating an insulated gate bipolar transistor | — | 1994-12-13 |
| 5360746 | Method of fabricating a semiconductor device | — | 1994-11-01 |
| 5344789 | Method of manufacturing vertical DMOS transistor with high off-breakdown-voltage and low on-resistance | — | 1994-09-06 |
| 5334546 | Method of forming a semiconductor device which prevents field concentration | — | 1994-08-02 |
| 5324670 | Method of manufacturing a thyristor device with improved turn-off characteristics | — | 1994-06-28 |
| 5309002 | Semiconductor device with protruding portion | — | 1994-05-03 |
| 5293056 | Semiconductor device with high off-breakdown-voltage and low on resistance | — | 1994-03-08 |
| 5289019 | Insulated gate bipolar transistor | — | 1994-02-22 |