Issued Patents All Time
Showing 26–40 of 40 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6211608 | Field emission device with buffer layer and method of making | James J. Alwan | 2001-04-03 |
| 6194783 | Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom | — | 2001-02-27 |
| 6165568 | Methods for forming field emission display devices | — | 2000-12-26 |
| 6153262 | Method for forming SbSI thin films | Raghvendra K. Pandey, Narayanan Solayappan | 2000-11-28 |
| 6140701 | Suppression of hillock formation in thin aluminum films | Tianhong Zhang, Allen McTeer | 2000-10-31 |
| 6139385 | Method of making a field emission device with silicon-containing adhesion layer | — | 2000-10-31 |
| 6137214 | Display device with silicon-containing adhesion layer | — | 2000-10-24 |
| 6107688 | Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition | David H. Wells | 2000-08-22 |
| 6106351 | Methods of manufacturing microelectronic substrate assemblies for use in planarization processes | James J. Alwan | 2000-08-22 |
| 6064149 | Field emission device with silicon-containing adhesion layer | — | 2000-05-16 |
| 6057238 | Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom | David H. Wells | 2000-05-02 |
| 6015323 | Field emission display cathode assembly government rights | Behnam Moradi, Michael Westphal | 2000-01-18 |
| 5969423 | Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition | David H. Wells | 1999-10-19 |
| 5407906 | Epitaxial layers of 2122 BCSCO superconductor thin films having single crystalline structure | Raghvendra K. Pandey, Narayanan Solayappan | 1995-04-18 |
| 5314869 | Method for forming single phase, single crystalline 2122 BCSCO superconductor thin films by liquid phase epitaxy | Raghvendra K. Pandey, Narayanan Solayappan | 1994-05-24 |