Issued Patents All Time
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9269633 | Method for forming gate electrode with depletion suppression and tunable workfunction | Steven Hung, James F. Gibbons | 2016-02-23 |
| 7920770 | Reduction of substrate optical leakage in integrated photonic circuits through localized substrate removal | Charles W. Holzwarth, Jason S. Orcutt, Milos Popovic, Rajeev Ram | 2011-04-05 |
| 7867859 | Gate electrode with depletion suppression and tunable workfunction | Steven Hung, James F. Gibbons | 2011-01-11 |
| 6921914 | Process for producing semiconductor article using graded epitaxial growth | Zhi-Yuan Cheng, Eugene A. Fitzgerald, Dimitri Antoniadis | 2005-07-26 |
| 6737670 | Semiconductor substrate structure | Zhi-Yuan Cheng, Eugene A. Fitzgerald, Dimitri Antoniadis | 2004-05-18 |
| 6713326 | Process for producing semiconductor article using graded epitaxial growth | Zhi-Yuan Cheng, Eugene A. Fitzgerald, Dimitri Antoniadis | 2004-03-30 |
| 6573126 | Process for producing semiconductor article using graded epitaxial growth | Zhi-Yuan Cheng, Eugene A. Fitzgerald, Dimitri Antoniadis | 2003-06-03 |
| 5256550 | Fabricating a semiconductor device with strained Si.sub.1-x Ge.sub.x layer | Stephen Laderman, Martin Scott, Theodore I. Kamins, Clifford A. King, James F. Gibbons +1 more | 1993-10-26 |
| 5202284 | Selective and non-selective deposition of Si.sub.1-x Ge.sub.x on a Si subsrate that is partially masked with SiO.sub.2 | Theodore I. Kamins, David B. Noble, James F. Gibbons, Martin Scott | 1993-04-13 |
| 5084411 | Semiconductor processing with silicon cap over Si.sub.1-x Ge.sub.x Film | Stephen Laderman, Martin Scott, Theodore I. Kamins, Clifford A. King, James F. Gibbons +1 more | 1992-01-28 |
| 4787551 | Method of welding thermocouples to silicon wafers for temperature monitoring in rapid thermal processing | Kenneth E. Williams, James F. Gibbons | 1988-11-29 |