Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12408569 | Titanium silicon nitride barrier layer | Jerry Mack, Somilkumar J. Rathi, Niloy Mukherjee | 2025-09-02 |
| 12165918 | Conformal titanium nitride-based thin films and methods of forming same | Niloy Mukherjee, Hae Young Kim, Jerry Mack, Sung Hoon Jung, Somilkumar J. Rathi +4 more | 2024-12-10 |
| 11832537 | Titanium silicon nitride barrier layer | Jerry Mack, Somilkumar J. Rathi, Niloy Mukherjee | 2023-11-28 |
| 11361992 | Conformal titanium nitride-based thin films and methods of forming same | Niloy Mukherjee, Hae Young Kim, Jerry Mack, Sung Hoon Jung, Somilkumar J. Rathi +4 more | 2022-06-14 |
| 8779426 | Thin film transistor | Ji Yeon SEO | 2014-07-15 |
| 8659094 | Array substrate for liquid crystal display device and method of fabricating the same | Byung-Geol Kim, Gee-Sung Chae, Woong Gi Jun | 2014-02-25 |
| 8551825 | Method for fabricating a thin film transistor with an organic passivation layer | Bo Hyun Lee, Woong Gi Jun | 2013-10-08 |
| 8129233 | Method for fabricating thin film transistor | Woong Gi Jun, Gee-Sung Chae | 2012-03-06 |
| 8062924 | Thin film transistor, method for fabricating the same and display device | Gee-Sung Chae, Woong Gi Jun | 2011-11-22 |
| 7989242 | Array substrate for liquid crystal display device and method of fabricating the same | Byung-Geol Kim, Gee-Sung Chae, Woong Gi Jun | 2011-08-02 |
| 7977676 | Thin film transistor array substrate with organic sol compound passivation layer | Bo Hyun Lee, Woong Gi Jun | 2011-07-12 |
| 7683367 | Thin film transistor, method for fabricating the same and display device | Gee-Sung Chae, Woong Gi Jun | 2010-03-23 |
| 7679085 | Display device, method for fabricating thin film transistor and method for fabricating thin film transistor array substrate using the said method | Woong Gi Jun, Gee-Sung Chae | 2010-03-16 |
| 7420213 | Thin film transistor array substrate having main gate insulating film formed of organic material and sub gate insulating film formed of ferroelectric material and fabricating method thereof | Gee-Sung Chae | 2008-09-02 |