WF

Wenqing Fang

L( Lattice Power (Jiangxi): 14 patents #3 of 19Top 20%
📍 Taiping, CN: #1 of 8 inventorsTop 15%
Overall (All Time): #352,866 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Showing 1–14 of 14 patents

Patent #TitleCo-InventorsDate
8461029 Method for fabricating InGaN-based multi-quantum well layers Fengyi Jiang, Li Wang, Chunlan Mo 2013-06-11
8431475 Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperature Fengyi Jiang, Li Wang, Chunlan Mo 2013-04-30
8431936 Method for fabricating a p-type semiconductor structure Fengyi Jiang, Li Wang, Chunlan Mo 2013-04-30
8383438 Method for fabricating InGaAIN light-emitting diodes with a metal substrate Chuanbing Xiong, Fengyi Jiang, Li Wang, Guping Wang, Shaohua Zhang 2013-02-26
8384100 InGaAIN light-emitting device and manufacturing method thereof Fengyi Jiang, Li Wang, Chuanbing Xiong, Hechu Liu, Maoxing Zhou 2013-02-26
8361880 Semiconductor light-emitting device with metal support substrate Fengyi Jiang, Chuanbing Xiong, Li Wang 2013-01-29
8053757 Gallium nitride light-emitting device with ultra-high reverse breakdown voltage Fengyi Jiang, Li Wang, Chunlan Mo, Yong-Jin Pu, Chuanbing Xiong 2011-11-08
7919784 Semiconductor light-emitting device and method for making same Fengyi Jiang, Li Wang 2011-04-05
7902556 Method for fabricating high-quality semiconductor light-emitting devices on silicon substrates Fengyi Jiang, Bilin Shao, Li Wang 2011-03-08
7888779 Method of fabrication InGaAIN film and light-emitting device on a silicon substrate Fengyi Jiang, Li Wang, Chunlan Mo, Hechu Liu, Maoxing Zhou 2011-02-15
7758695 Method for fabricating metal substrates with high-quality surfaces Chuanbing Xiong, Li Wang, Guping Wang, Fengyi Jiang 2010-07-20
7705348 Semiconductor light-emitting device with electrode for N-polar InGaAIN surface Li Wang, Fengyi Jiang, Maoxing Zhou 2010-04-27
7692205 Semiconductor light-emitting device Li Wang, Fengyi Jiang 2010-04-06
7615420 Method for manufacturing indium gallium aluminium nitride thin film on silicon substrate Fengyi Jiang, Li Wang 2009-11-10