WB

Wiebe B. De Boer

Philips: 6 patents #792 of 7,731Top 15%
U.S. Philips: 6 patents #914 of 8,851Top 15%
NB Nxp B.V.: 1 patents #1,722 of 3,591Top 50%
📍 Eindhoven, NY: #14 of 32 inventorsTop 45%
Overall (All Time): #386,375 of 4,157,543Top 10%
13
Patents All Time

Issued Patents All Time

Showing 1–13 of 13 patents

Patent #TitleCo-InventorsDate
7921802 System and method for suppression of wafer temperature drift in cold-wall CVD systems 2011-04-12
6838359 Suppression of n-type autodoping in low-temperature Si and SiGe epitaxy 2005-01-04
6579752 Phosphorus dopant control in low-temperature Si and SiGe epitaxy 2003-06-17
6459133 Enhanced flux semiconductor device with mesa and method of manufacturing same Adam Brown, Godefridus A. M. Hurkx, Hendrik G. A. Huizing, Eddie Huang 2002-10-01
6436785 Method of manufacturing semiconductor device with a tunnel diode Adam Brown, Godefridus Adrianus Maria Hurkx, Jan W. Slotboom 2002-08-20
6417526 Semiconductor device having a rectifying junction and method of manufacturing same Adam Brown, Godefridus Adrianus Maria Hurkx, Michael S. Peter, Hendrik Gezienus Albert Huizing 2002-07-09
6417536 Semiconductor device with memory capacitor having an electrode of Si1-x Gex Marieke C. Martens 2002-07-09
6368946 Manufacture of a semiconductor device with an epitaxial semiconductor zone Ronald Dekker, Cornelis Eustatius Timmering, Doede Terpstra 2002-04-09
6242762 Semiconductor device with a tunnel diode and method of manufacturing same Adam Brown, Godefridus A. M. Hurkx, Jan W. Slotboom 2001-06-05
6218222 Method of manufacturing a semiconductor device with a schottky junction Adam Brown 2001-04-17
6100152 Method of manufacturing a semiconductor device with a fast bipolar transistor Catharina Huberta Henrica Emons, Doede Terpstra, Cornelis Eustatius Timmering 2000-08-08
5915187 Method of manufacturing a semiconductor device with a pn junction provided through epitaxy Frederikus R. J. Huisman, Oscar J. A. Bulik, Ronald Dekker 1999-06-22
5895248 Manufacture of a semiconductor device with selectively deposited semiconductor zone Matthias J.J. Theunissen, Armand Pruijmboom 1999-04-20