Issued Patents All Time
Showing 51–74 of 74 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6977414 | Semiconductor device | Kazutoshi Nakamura, Yoshihiro Yamaguchi, Syotaro Ono, Akio Nakagawa | 2005-12-20 |
| 6914294 | Semiconductor device | Kazutoshi Nakamura, Tomoko Matsudai, Akio Nakagawa | 2005-07-05 |
| 6878992 | Vertical-type power MOSFET with a gate formed in a trench | Norio Yasuhara, Kazutoshi Nakamura, Akio Nakagawa, Syotaro Ono | 2005-04-12 |
| 6864533 | MOS field effect transistor with reduced on-resistance | Norio Yasuhara, Akio Nakagawa, Kazutoshi Nakamura | 2005-03-08 |
| 6838730 | Semiconductor device | Syotaro Ono, Yoshihiro Yamaguchi, Akio Nakagawa | 2005-01-04 |
| 6818945 | Semiconductor device | Syotaro Ono, Akio Nakagawa | 2004-11-16 |
| 6787848 | Vertical type power mosfet having trenched gate structure | Syotaro Ono | 2004-09-07 |
| 6720618 | Power MOSFET device | Norio Yasuhara, Syotaro Ono, Shinichi Hodama, Akio Nakagawa | 2004-04-13 |
| 6690085 | High-voltage semiconductor device used as switching element or the like | Akio Nakagawa | 2004-02-10 |
| 6614077 | Semiconductor device improved in ESD reliability | Kazutoshi Nakamura, Akio Nakagawa | 2003-09-02 |
| 6614089 | Field effect transistor | Kazutoshi Nakamura, Akio Nakagawa | 2003-09-02 |
| 6605844 | Semiconductor device | Kazutoshi Nakamura, Akio Nakagawa | 2003-08-12 |
| 6563193 | Semiconductor device | Kazutoshi Nakamura, Tomoko Matsudai, Hirofumi Nagano, Akio Nakagawa | 2003-05-13 |
| 6552389 | Offset-gate-type semiconductor device | Norio Yasuhara, Syotaro Ono, Kazutoshi Nakamura, Shinichi Hodama, Akio Nakagawa | 2003-04-22 |
| 6469346 | High-breakdown-voltage semiconductor device | Akio Nakagawa, Kozo Kinoshita | 2002-10-22 |
| 6452231 | Semiconductor device | Akio Nakagawa | 2002-09-17 |
| 6380566 | Semiconductor device having FET structure with high breakdown voltage | Tomoko Matsudai, Kazutoshi Nakamura, Hirofumi Nagano, Akio Nakagawa | 2002-04-30 |
| 6353252 | High breakdown voltage semiconductor device having trenched film connected to electrodes | Norio Yasuhara, Kazutoshi Nakamura | 2002-03-05 |
| 6297534 | Power semiconductor device | Kazutoshi Nakamura, Akio Nakagawa | 2001-10-02 |
| 6259136 | High-breakdown-voltage semiconductor device | Akio Nakagawa, Kozo Kinoshita | 2001-07-10 |
| 6118149 | Trench gate MOSFET | Akio Nakagawa | 2000-09-12 |
| 5985708 | Method of manufacturing vertical power device | Akio Nakagawa, Naoharu Sugiyama, Tomoko Matsudai, Norio Yasuhara, Atsusi Kurobe +2 more | 1999-11-16 |
| 5932897 | High-breakdown-voltage semiconductor device | Akio Nakagawa, Kozo Kinoshita | 1999-08-03 |
| 5777371 | High-breakdown-voltage semiconductor device | Yoshihiro Yamaguchi, Hideyuki Funaki | 1998-07-07 |