Issued Patents All Time
Showing 51–75 of 130 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8139403 | Spin memory and spin transistor | Tomoaki Inokuchi, Takao Marukame, Mizue Ishikawa, Hideyuki Sugiyama, Hisanori Aikawa +3 more | 2012-03-20 |
| 8139405 | Magnetoresistive element and magnetoresistive random access memory including the same | Masatoshi Yoshikawa, Eiji Kitagawa, Tadaomi Daibou, Toshihiko Nagase, Hiroaki Yoda | 2012-03-20 |
| 8098514 | Magnetoresistive element and magnetic memory | Toshihiko Nagase, Katsuya Nishiyama, Tadashi Kai, Masahiko Nakayama, Makoto Nagamine +3 more | 2012-01-17 |
| 8036025 | Magnetoresistive element | Toshihiko Nagase, Masatoshi Yoshkawa, Eiji Kitagawa, Masahiko Nakayama, Tadashi Kai +1 more | 2011-10-11 |
| 8014193 | Magnetoresistance effect element and magnetic random access memory | Masahiko Nakayama, Tadashi Kai, Sumio Ikegawa, Hiroaki Yoda | 2011-09-06 |
| 8009465 | Magnetoresistive element | Masahiko Nakayama, Tadashi Kai, Yoshiaki Fukuzumi, Toshihiko Nagase, Sumio Ikegawa +1 more | 2011-08-30 |
| 7965544 | Magnetic memory element, magnetic memory having said magnetic memory element, and method for driving magnetic memory | Eiji Kitagawa, Masatoshi Yoshikawa, Hiroaki Yoda | 2011-06-21 |
| 7957184 | Magnetoresistive element and magnetoresistive random access memory including the same | Masatoshi Yoshikawa, Eiji Kitagawa, Tadaomi Daibou, Toshihiko Nagase, Hiroaki Yoda | 2011-06-07 |
| 7924607 | Magnetoresistance effect element and magnetoresistive random access memory using the same | Masatoshi Yoshikawa, Eiji Kitagawa, Tadashi Kai, Toshihiko Nagase, Hiroaki Yoda | 2011-04-12 |
| 7920361 | Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and Sc | Masatoshi Yoshikawa, Tadashi Kai, Toshihiko Nagase, Eiji Kitagawa, Hiroaki Yoda | 2011-04-05 |
| 7875903 | Magnetic memory device | Masahiko Nakayama, Tadashi Kai, Sumio Ikegawa, Yoshiaki Fukuzumi | 2011-01-25 |
| 7869265 | Magnetic random access memory and write method of the same | Yuui Shimizu | 2011-01-11 |
| 7848059 | Magnetoresistive effect device and magnetic random access memory using the same | Masatoshi Yoshikawa, Tadashi Kai, Toshihiko Nagase, Eiji Kitagawa, Hiroaki Yoda | 2010-12-07 |
| 7848136 | Magnetic memory | Hisanori Aikawa, Tomomasa Ueda, Takeshi Kajiyama, Yoshiaki Asao, Hiroaki Yoda | 2010-12-07 |
| 7787288 | Magnetic memory element, magnetic memory having said magnetic memory element, and method for driving magnetic memory | Eiji Kitagawa, Masatoshi Yoshikawa, Hiroaki Yoda | 2010-08-31 |
| 7768824 | Magnetoresistive element and magnetoresistive random access memory including the same | Masatoshi Yoshikawa, Eiji Kitagawa, Tadaomi Daibou, Toshihiko Nagase, Hiroaki Yoda | 2010-08-03 |
| 7663197 | Magnetoresistive element | Toshihiko Nagase, Masatoshi Yoshikawa, Eiji Kitagawa, Masahiko Nakayama, Tadashi Kai +1 more | 2010-02-16 |
| 7633795 | Magnetoresistive random access memory and its write control method | Naoharu Shimomura, Ryousuke Takizawa | 2009-12-15 |
| 7599156 | Magnetoresistive element having specially shaped ferromagnetic layer | Masahiko Nakayama, Yoshiaki Fukuzumi, Tadashi Kai | 2009-10-06 |
| 7596015 | Magnetoresistive element and magnetic memory | Eiji Kitagawa, Toshihiko Nagase, Masatoshi Yoshikawa, Katsuya Nishiyama, Hiroaki Yoda | 2009-09-29 |
| 7593193 | Magnetoresistive element and magnetic memory device | Koichiro Inomata, Kentaro Nakajima, Yoshiaki Saito, Masayuki Sagoi | 2009-09-22 |
| 7564109 | MRAM and method of manufacturing the same | Takeshi Kajiyama, Hisanori Aikawa, Tomomasa Ueda, Masatoshi Yoshikawa | 2009-07-21 |
| 7518907 | Magnetoresistive element | Masahiko Nakayama, Tadashi Kai, Yoshiaki Fukuzumi, Toshihiko Nagase, Sumio Ikegawa +1 more | 2009-04-14 |
| 7494724 | Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory | Shiho Okuno, Yuichi Ohsawa, Shigeru Haneda, Yuzo Kamiguchi | 2009-02-24 |
| 7470963 | Magnetoresistive element and magnetic memory | Tadashi Kai, Shigeki Takahashi, Tomomasa Ueda, Yoshiaki Saito | 2008-12-30 |