SI

Sumio Ikegawa

KT Kabushiki Kaisha Toshiba: 36 patents #609 of 21,451Top 3%
ET Everspin Technologies: 12 patents #21 of 88Top 25%
📍 Seoul, AZ: #3 of 19 inventorsTop 20%
Overall (All Time): #54,211 of 4,157,543Top 2%
50
Patents All Time

Issued Patents All Time

Showing 26–50 of 50 patents

Patent #TitleCo-InventorsDate
8143684 Magnetoresistive element Makoto Nagamine, Toshihiko Nagase, Katsuya Nishiyama, Masatoshi Yoshikawa 2012-03-27
8120948 Data writing method for magnetoresistive effect element and magnetic memory Masahiko Nakayama, Hisanori Aikawa, Tsuneo Inaba, Kenji Tsuchida, Hiroaki Yoda +1 more 2012-02-21
8014193 Magnetoresistance effect element and magnetic random access memory Masahiko Nakayama, Tadashi Kai, Hiroaki Yoda, Tatsuya Kishi 2011-09-06
8009465 Magnetoresistive element Masahiko Nakayama, Tadashi Kai, Tatsuya Kishi, Yoshiaki Fukuzumi, Toshihiko Nagase +1 more 2011-08-30
7898846 Magnetoresistive element Makoto Nagamine, Toshihiko Nagase, Katsuya Nishiyama, Masatoshi Yoshikawa 2011-03-01
7894246 Magnetoresistive element and magnetic memory Tomomasa Ueda, Hisanori Aikawa, Masatoshi Yoshikawa, Naoharu Shimomura, Masahiko Nakayama +2 more 2011-02-22
7875903 Magnetic memory device Masahiko Nakayama, Tadashi Kai, Yoshiaki Fukuzumi, Tatsuya Kishi 2011-01-25
7525837 Magnetoresistive effect element and magnetic memory Tadashi Kai, Masahiko Nakayama, Yoshiaki Fukuzumi, Yoshihisa Iwata 2009-04-28
7518906 Magneto-resistive element Masahiko Nakayama, Tadashi Kai, Eiji Kitagawa, Hiroaki Yoda 2009-04-14
7518907 Magnetoresistive element Masahiko Nakayama, Tadashi Kai, Tatsuya Kishi, Yoshiaki Fukuzumi, Toshihiko Nagase +1 more 2009-04-14
7414880 Magnetoresistive effect element and magnetic memory Tadashi Kai, Masahiko Nakayama, Yoshiaki Fukuzumi, Yoshihisa Iwata 2008-08-19
7411263 Magnetic memory device Masahiko Nakayama, Tadashi Kai, Yoshiaki Fukuzumi, Tatsuya Kishi 2008-08-12
7355884 Magnetoresistive element Masahiko Nakayama, Tadashi Kai, Tatsuya Kishi, Yoshiaki Fukuzumi, Toshihiko Nagase +1 more 2008-04-08
7266011 Magneto-resistance effect element and magnetic memory Minoru Amano, Tatsuya Kishi, Yoshiaki Saito, Hiroaki Yoda 2007-09-04
7245524 Magnetic memory device and write method of magnetic memory device Hiroaki Yoda, Tadashi Kai, Masahiko Nakayama, Tatsuya Kishi 2007-07-17
7203088 Magnetoresistive random access memory and driving method thereof Yoshihisa Iwata, Kenji Tsuchida 2007-04-10
7193890 Magnetoresistive effect device, magnetic random access memory, and magnetoresistive effect device manufacturing method Toshihiko Nagase 2007-03-20
7172920 Method of manufacturing an image device Kohei Nakayama, Hideyuki Funaki, Yoshinori Iida, Keitaro Shigenaka 2007-02-06
7038939 Magneto-resistance effect element and magnetic memory Minoru Amano, Tatsuya Kishi, Yoshiaki Saito, Hiroaki Yoda 2006-05-02
7015472 Infrared ray detecting type imaging device Kohei Nakayama, Hideyuki Funaki, Yoshinori Iida, Keitaro Shigenaka 2006-03-21
6984856 Infrared ray detecting type imaging device Kohei Nakayama, Hideyuki Funaki, Yoshinori Iida, Keitaro Shigenaka 2006-01-10
5629267 Superconducting element having an intermediate layer with multiple fluorite blocks Tadao Miura 1997-05-13
4922462 Reversible memory structure for optical reading and writing and which is capable of erasure Yoshiaki Terashima, Nobuaki Yasuda, Katsutarou Ichihara, Shuichi Komatsu, Shinji Arai 1990-05-01
4855992 Reversible optical recording medium with an optothermally deformable recording layer Akio Hori, Shuichi Komatsu, Shinji Arai, Nobuaki Yasuda 1989-08-08
4839861 Information recording medium rewritable by utilizing two metastable phases of a recording layer and method using the same Shuichi Komatsu, Shinji Arai, Sumio Ashida, Nobuaki Yasuda 1989-06-13