NI

Nakfumi Inada

KT Kabushiki Kaisha Toshiba: 1 patents #13,537 of 21,451Top 65%
Overall (All Time): #3,771,922 of 4,157,543Top 95%
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Showing 1–1 of 1 patents

Patent #TitleCo-InventorsDate
5420062 Method of manufacturing an insulated gate FET having double-layered wells of low and high impurity concentrations Osamu Takata 1995-05-30