Issued Patents All Time
Showing 26–38 of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8357962 | Spin transistor and method of manufacturing the same | Takao Marukame, Tomoaki Inokuchi, Hideyuki Sugiyama, Yoshiaki Saito | 2013-01-22 |
| 8335059 | Tunneling magnetoresistive effect element and spin MOS field-effect | Yoshiaki Saito, Hideyuki Sugiyama, Tomoaki Inokuchi | 2012-12-18 |
| 8330196 | Semiconductor device and method of manufacturing the same | Takao Marukame, Tomoaki Inokuchi, Hideyuki Sugiyama, Yoshiaki Saito | 2012-12-11 |
| 8243400 | Tunneling magnetoresistive effect element and spin MOS field-effect transistor | Yoshiaki Saito, Hideyuki Sugiyama, Tomoaki Inokuchi | 2012-08-14 |
| 8154916 | Nonvolatile memory circuit using spin MOS transistors | Hideyuki Sugiyama, Tetsufumi Tanamoto, Takao Marukame, Tomoaki Inokuchi, Yoshiaki Saito | 2012-04-10 |
| 8139403 | Spin memory and spin transistor | Tomoaki Inokuchi, Takao Marukame, Hideyuki Sugiyama, Hisanori Aikawa, Masahiko Nakayama +3 more | 2012-03-20 |
| 8111087 | Semiconductor integrated circuit | Tomoaki Inokuchi, Hideyuki Sugiyama, Yoshiaki Saito | 2012-02-07 |
| 8026561 | Spin MOSFET and reconfigurable logic circuit | Yoshiaki Saito, Hideyuki Sugiyama, Tomoaki Inokuchi, Takao Marukame | 2011-09-27 |
| 7973351 | Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the same | Takao Marukame, Tomoaki Inokuchi, Hideyuki Sugiyama, Yoshiaki Saito | 2011-07-05 |
| 7956395 | Spin transistor and magnetic memory | Tomoaki Inokuchi, Hideyuki Sugiyama, Yoshiaki Saito | 2011-06-07 |
| 7943974 | Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy | Yoshiaki Saito, Hideyuki Sugiyama, Tomoaki Inokuchi | 2011-05-17 |
| 7796423 | Reconfigurable logic circuit | Hideyuki Sugiyama, Tomoaki Inokuchi, Yoshiaki Saito, Tetsufumi Tanamoto | 2010-09-14 |
| 7709867 | Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy | Yoshiaki Saito, Hideyuki Sugiyama, Tomoaki Inokuchi | 2010-05-04 |