KM

Kouhei Morizuka

KT Kabushiki Kaisha Toshiba: 20 patents #1,460 of 21,451Top 7%
Overall (All Time): #225,544 of 4,157,543Top 6%
20
Patents All Time

Issued Patents All Time

Showing 1–20 of 20 patents

Patent #TitleCo-InventorsDate
7329909 Nitride semiconductor device Wataru Saito, Ichiro Omura 2008-02-12
7038250 Semiconductor device suited for a high frequency amplifier Toru Sugiyama, Tetsuro Nozu 2006-05-02
6940157 High frequency semiconductor module, high frequency semiconductor device and manufacturing method for the same Toru Sugiyama, Masayuki Sugiura, Yasuhiko Kuriyama, Yoshikazu Tanabe 2005-09-06
6790694 High frequency semiconductor module, high frequency semiconductor device and manufacturing method for the same Toru Sugiyama, Masayuki Sugiura, Yasuhiko Kuriyama, Yoshikazu Tanabe 2004-09-14
6448859 High frequency power amplifier having a bipolar transistor 2002-09-10
6344775 Semiconductor device Yasuhiko Kuriyama 2002-02-05
6127716 Heterojunction bipolar transistor and manufacturing method thereof Masayuki Sugiura 2000-10-03
6051484 Semiconductor device and method of manufacturing thereof 2000-04-18
5930133 Rectifying device for achieving a high power efficiency 1999-07-27
5898909 Ultra high frequency radio communication apparatus Kunio Yoshihara, Mitsuo Konno, Yasuo Ashizawa, Junko Akagi, Yasuhiro Kuriyama +6 more 1999-04-27
5898200 Microwave integrated circuit Toru Sugiyama 1999-04-27
5637909 Semiconductor device and method of manufacturing the same Hiroomi Nakajima, Yasuhiro Katsumata, Hiroshi Iwai, Toshihiko Iinuma, Kazumi Inou +3 more 1997-06-10
5510647 Semiconductor device and method of manufacturing the same Hiroomi Nakajima, Yasuhiro Katsumata, Hiroshi Iwai, Toshihiko Iinuma, Kazumi Inou +3 more 1996-04-23
5331186 Heterojunction bipolar transistor with base electrode having Schottky barrier contact to the emitter 1994-07-19
5266818 Compound semiconductor device having an emitter contact structure including an I.sub.nx Ga.sub.1 -.sub.x As graded-composition layer Kunio Tsuda 1993-11-30
5153692 Semiconductor device 1992-10-06
5124270 Bipolar transistor having external base region 1992-06-23
5053846 Semiconductor bipolar device with phosphorus doping 1991-10-01
4933732 Heterojunction bipolar transistor Riichi Katoh, Mamoru Kurata 1990-06-12
4679305 Method of manufacturing a heterojunction bipolar transistor having self-aligned emitter and base and selective isolation regions 1987-07-14